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| SP8M7 Transistors Switching SP8M7 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). Application Power switching, DC / DC converter. External dimensions (Unit : mm) SOP8 (8) 5.00.2 (5) 6.00.3 3.90.15 Max.1.75 1.50.1 0.15 1.27 0.40.1 0.1 Each lead has same dimensions Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Source current Continuous (Body diode) Pulsed Total power dissipation (TC=25C) Channel temperature Storage temperature Drain current 1 Pw10s, Duty cycle1% 2 MOUNTED ON A CERAMIC BOARD. Equivalent circuit Unit V V A A A A W C C (8) (7) (6) (5) (8) (7) (6) (5) Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits Nchannel Pchannel 30 -30 20 20 5.0 7.0 20 28 1.6 -1.6 6.4 -28 2 2 150 150 -55 to +150 -55 to +150 1 1 2 2 2 0.50.1 (1) (4) 0.20.1 (1) (2) (3) (4) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Source (4) Tr2 (Pch) Gate (5) Tr2 (Pch) Drain (6) Tr2 (Pch) Drain (7) Tr1 (Nch) Drain (8) Tr1 (Nch) Drain 1 1 (1) (2) (3) (4) 1 ESD PROTECTION DIODE 2 BODY DIODE A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. Thermal resistance (Ta=25C) Parameter Channel to ambient MOUNTED ON A CERAMIC BOARD. Symbol Rth (ch-A) Limits 62.5 Unit C / W 1/5 SP8M7 Transistors N-ch Electrical characteristics (Ta=25C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Pulsed RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Min. - 30 - 1.0 - - - 3.0 - - - - - - - - - - Typ. - - - - 36 52 58 - 230 80 50 6 8 22 5 3.9 1.1 1.4 Max. 10 - 1 2.5 51 73 82 - - - - - - - - 5.5 - - Unit A V A V m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=5.0A, VGS=10V ID=5.0A, VGS=4.5V ID=5.0A, VGS=4V ID=5.0A, VDS=10V VDS=10V VGS=0V f=1MHz ID=2.5A, VDD 15V VGS=10V RL=6.00 RGS=10 VDD 15V VGS=5V ID=5.0A Body diode characteristics (Source-Drain Characteristics) (Ta=25C) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. 1.2 Unit V Conditions IS=6.4A, VGS=0V 2/5 SP8M7 Transistors P-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. IGSS - Gate-source leakage Drain-source breakdown voltage V(BR) DSS -30 - Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) -1.0 - Static drain-source on-state - RDS (on) resistance - Yfs 6.0 Forward transfer admittance - Input capacitance Ciss - Output capacitance Coss - Reverse transfer capacitance Crss - Turn-on delay time td (on) - Rise time tr - Turn-off delay time td (off) - Fall time tf - Total gate charge Qg - Gate-source charge Qgs - Gate-drain charge Qgd Pulsed Typ. - - - - 20 25 30 - 2600 450 350 20 50 110 70 25 5.5 10 Max. 10 - -1 -2.5 28 35 42 - - - - - - - - - - - Unit A V A V m S pF pF pF ns ns ns ns nC nC nC Conditions VGS= 20V, VDS=0V ID= -1mA, VGS=0V VDS= -30V, VGS=0V VDS= -10V, ID= -1mA ID= -7.0A, VGS= -10V ID= -7.0A, VGS= -4.5V ID= -7.0A, VGS= -4.0V ID= -7.0A, VDS= -10V VDS= -10V VGS=0V f=1MHz ID= -3.5A, VDD -15V VGS= -10V RL=4.3 RGS=10 VDD -15V VGS= -5V ID= -7.0A Body diode characteristics (Source-Drain Characteristics) (Ta=25C) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. -1.2 Unit V Conditions IS=-1.6A, VGS=0V 3/5 SP8M7 Transistors N-ch Electrical characteristic curves 1000 1000 tf Ciss GATE-SOURCE VOLTAGE : VGS (V) 10 Ta=25C f=1MHz VGS=0V 10000 10 Ta=25C VDD=15V VGS=10V RG=10 Pulsed SWITCHING TIME : t (ns) CAPACITANCE : C (pF) Ta=25C 9 VDD=15V ID=5A 8 RG=10 7 Pulsed 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 100 Coss Crss 100 td (off) 10 tr td (on) 10 0.01 0.1 1 10 100 1 0.01 0.1 1 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics VDS=10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 10 300 Ta=25C Pulsed 250 200 150 100 50 0 10 VGS=0V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 1 Ta=125C Ta=75C Ta=25C Ta= -25C SOURCE CURRENT : Is (A) DRAIN CURRENT : ID (A) ID=5A ID=2.5A 1 0.1 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 12 14 16 0.01 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : VGS (V) GATE-SOURCE VOLTAGE : VGS (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) Ta=125C Ta=75C Ta=25C Ta= -25C VGS=10V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C VGS=4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 1000 1000 1000 Ta=125C Ta=75C Ta=25C Ta= -25C VGS=4V Pulsed 100 100 100 10 10 10 1 0.1 1 10 1 0.1 1 10 1 0.1 1 10 DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current () Fig.8 Static Drain-Source On-State Resistance vs. Drain Current () Fig.9 Static Drain-Source On-State Resistance vs. Drain Current () 4/5 SP8M7 Transistors P-ch Electrical characteristic curves 10000 GATE-SOURCE VOLTAGE : -VGS (V) Ta=25C f=1MHz VGS=0V Ciss 10000 8 Ta=25C VDD= -15V VGS= -10V RG=10 Pulsed 7 6 5 4 3 2 1 0 0 5 10 15 20 SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1000 tf td (off) Ta=25C VDD= -15V ID= -7A RG=10 Pulsed 1000 100 tr 10 Coss Crss td (on) 100 0.01 0.1 1 10 100 1 0.01 0.1 1 10 25 30 DRAIN-SOURCE VOLTAGE : -VDS (V) DRAIN CURRENT : -ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.1 Typical Capacitance vs. Drain-Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics VDS= -10V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 10 200 Ta=25C Pulsed 150 10 1 SOURCE CURRENT : -IS (A) DRAIN CURRENT : -ID (A) 1 Ta=125C Ta=75C Ta=25C Ta= -25C VGS=0V Pulsed 0.1 100 0.1 0.01 50 ID=-3.5A ID=-7.0A 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0 2 4 6 8 10 12 14 16 0.01 0.0 0.5 1.0 1.5 GATE-SOURCE VOLTAGE : -VGS (V) GATE-SOURCE VOLTAGE : -VGS (V) SOURCE-DRAIN VOLTAGE : -VSD (V) Fig.4 Typical Transfer Characteristics Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Source Current vs. Source-Drain Voltage STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 100 VGS= -10V Pulsed 1000 VGS= -4.5V Pulsed 1000 VGS= -4V Pulsed 10 Ta=125C Ta=75C Ta=25C Ta= -25C 100 Ta=125C Ta=75C Ta=25C Ta= -25C 100 Ta=125C Ta=75C Ta=25C Ta= -25C 1 0.1 1 10 10 0.1 1 10 10 0.1 1 10 DRAIN CURRENT : -ID (A) DRAIN CURRENT : -ID (A) DRAIN CURRENT : -ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current () Fig.8 Static Drain-Source On-State Resistance vs. Drain Current () Fig.9 Static Drain-Source On-State Resistance vs. Drain Current () 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0 |
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